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SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING. FEATURES
Low Series Resistance : rS=0.55 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
KDV269E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
High Capacitance Ratio : C2V/C25V=11.5(Typ.)
C 1
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR VRM Tj Tstg RATING 34 36 (RL=10k ) 125 -55 125 UNIT V V
1. ANODE 2. CATHODE
B
A
DIM A B C D E F
MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance C(Max.)-C(Min.) C(Min.) (VR=2~25V) SYMBOL VR IR C2V C25V C2V/C25V C25V/C28V rS VR=5V, f=470MHz IR=1 A VR=28V VR=2V, f=1MHz VR=25V, f=1MHz TEST CONDITION MIN. 34 29 2.5 11.0 1.03 TYP. 31.5 2.75 11.5 1.05 0.55 MAX. 10 34 2.9 0.7 UNIT V nA pF pF -
Note : Available in matched group for capacitance to 2.0%. 0.02
Marking
Type Name
UR
2000. 3. 24
Revision No : 0
1/2
KDV269E
C V - VR
500 REVERSE CURRENT I R (A) CAPACITANCE C V (pF)
f=1MHz Ta=25 C
I R - VR
1000p
5C Ta=7 50 C Ta=
100p
100 50
10p
Ta=
25 C
1p
10 0 10 20 30
0.1p 0 8 16 24 32
REVERSE VOLTAGE VR (V)
REVERSE VOLTAGE V R (V)
r s - VR
1.0 SERIES RESISTANCE r s () 0.8 0.6 0.4 0.2 0 1 3 5 10 30 C (%)
f=470MHz Ta=25 C
C - Ta
3 2 1 0 -1 -2 -40 -20 0 20 40 60 80
f=1MHz VR=2V 10V 20V
CAPACITANCE CHANGE RATIO
25V
REVERSE VOLTAGE VR (V)
AMBIENT TEMPERATURE Ta ( C)
2000. 3. 24
Revision No : 0
2/2

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